p age:p2 - p 1 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. fe a tures ? high transition frequency:vceo=120v. ? high voltage:vce(sat)=0.5v(max). ? pc=1w(mounted on ceramic substrate). ? small flat package. ? complementary: kta1661. maximum ratings ( t a =25 unless otherwise noted) par a met e r symbol v a lue uni t collector - base v ol t age v cbo 1 20 v collector - emitter v ol t age v ceo 120 v emitter - base v ol t age v ebo 5 v collector cur r ent - continuous i c 0 .8 a collector power dissi p ation p c 500 m w junction t empe r ature t j 150 s torage t emp e r a ture t stg - 55to +150 electrical characteristics ( @ ta=25 unless otherwise specified ) parameter s y mbol test conditions m in t yp m ax u nit collector - b as e breakdo w n voltage v cbo i c =1ma,i e =0 120 v collector - e m itter breakd o wn volta g e v ceo i c =10ma,i b =0 120 v emitter - base breakdo w n voltage v ebo i e =1ma,i c =0 5 v collector cut - off current i cbo v c b =120 v ,i e =0 0.1 a emitter cut - off current i ebo v eb =5 v ,i c =0 0.1 a dc c urrent g ain h fe v c e =5 v ,i c =100ma 80 240 collector - e m itter saturation voltage v ce(s a t ) i c =500ma, i b = 50ma 1.0 v base - emitter voltage v be v c e =5v, i b = 500ma 1.0 v transition frequency f t v c e =5v, i c = 0.1a 120 mhz collector output capacitance c ob v c b =10v,i e =0,f=1mhz 30 pf classification of h fe rank o y range 8 0 - 160 120 - 240 marking co cy k t c 4373 ( np n ) 1. base 2. collecto sot - 89 3. emitter
p age:p2 - p 2 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. k t c 4373 typical characteristics
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